Recorded March 25, 2021
MicroLED is largely recognized as the ultimate display technology and is one of the fastest-growing technologies in the world today. MicroLED is a technology that has the potential to transform the display industry. Increased brightness, reduced power, extended lifetimes, unlimited form-factors and always-on displays are many of the promises that microLED displays look to deliver.
Despite the remarkable progress, many opportunities remain for taking advantage of improved understanding of the basic III-nitride material properties and growth/device processes to benefit the further development of microLED technology.
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About the Presenters:
Temel Büyüklimanli, Ph.D., Vice President, Technology and Innovation
Dr. Temel Büyüklimanli joined EAG Laboratories in 1994 as a SIMS analyst, after being a Research Scientist in the Materials Characterization Laboratory at Pennsylvania State University, where he participated in glass surfaces studies. He has authored several journal articles and has given many lectures on surface characterization of ceramic and semiconductor materials to a wide range of industrial groups. He has worked with other SIMS scientists to develop new analytical techniques to address emerging semiconductor technology needs. Most significant has been the PCOR-SIMS protocols for accurate dopant/impurity, alloy composition and layer definition characterization of multi-component thin film materials, especially compound semiconductors.
Michael Salmon, Ph.D., Scientific Fellow – Advanced Imaging Group
Dr. Mike Salmon joined EAG Labs in 2007 as a Scientist. Mike earned his Ph D. degree in Materials Science and Engineering from North Carolina State University (NCSU) with an emphasis on microscopy and surface analysis. Over his career at EAG, Mike has focused on highly localized characterization and failure analysis, primarily of compound semiconductors, utilizing Focused Ion Beam (FIB), Scanning Electron Microscopy (SEM), Scanning Transmission Electron Microscopy (STEM), Electron Beam Induced Current (EBIC), and Cathodoluminescence (CL). Over his career with EAG, he has helped publish several journal articles and has given many presentations to a wide variety of industrial and academic audiences regarding materials analysis and FA of compound semiconductors.
In this webinar we will cover:
- Review the characterization techniques for III-V devices including
- Atom Probe Tomography (APT)
- Cathode Luminescence (CL)
- & other techniques
- Overview of additional issues for microLEDs
- Q&A from a panel of EAG technique experts