SMART Chart Webinar Series: SIMS

Dynamic Secondary Ion Mass Spectrometry (SIMS)

SMART-Chart-SIMSLet's take a deeper dive into our SMART Chart!

Dynamic Secondary Ion Mass Spectrometry (SIMS) is a unique technique often used to investigate the elemental structure of solid materials with depth. It has the sensitivity to detect parts per billion concentrations as well as to quantify atomic percent level matrix compositions. It can measure all elements in the periodic table, including H. Layers of few nanometers to micrometers thickness can be characterized using proper SIMS analytical protocols. This ability to resolve concentration and thickness (or depth) ranges has made SIMS the routine technique for in-depth chemical characterization for semiconductor materials since its first used >65 years ago. In a single analysis SIMS can determine most of the dopant and impurity concentrations and thicknesses of the individual layers grown. Although dynamic SIMS is most often used for semiconductors materials, it can be applied to any solid material from plastics to ceramics.

SIMS is a non-trivial, empirical technique, which necessitates reference materials of similar composition to the unknowns, and often characterized by other techniques for accuracy. However, achieving <2% precision/repeatability is routine for most analyses. With sophisticated analytical protocols, SIMS can be a great analytical method to support research and development, quality control, failure analysis, and process monitoring.

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About the Presenter:

Temel BuyuklimanliTemel Büyüklimanli, Ph.D., Scientific Fellow & Vice President
Temel Büyüklimanli joined EAG Laboratories in 1994 as a SIMS analyst, after being a Research Scientist in the Materials Characterization Laboratory at Pennsylvania State University, where he participated in glass surfaces studies. He has authored several journal articles and has given many lectures on surface characterization of ceramic and semiconductor materials to a wide range of industrial groups. He has worked with other SIMS scientists to develop new analytical techniques to address emerging semiconductor technology needs. Most significant has been the PCOR-SIMS protocols for accurate dopant/impurity, alloy composition and layer definition characterization of multi-component thin film materials, especially compound semiconductors.

In this webinar we will cover:

  • Principles of the technique
    • Static-SIMS vs Dynamic-SIMS
    • Differences between spectrometers
  • Analytical requirements
  • Variety of real-world examples for wide variety of materials
  • Strengths and limitations