TEM - PED
Precession Electron Diffraction (PED)
As new technologies continue to progress in recent years, materials characterization for such devices and processes becomes even more challenging. Materials characterization, which involves in chemical/elemental analysis and structural analysis, needs to be performed not only at much smaller scale but also at higher sensitivity. For chemical/elemental analysis, technologies, like SIMS, AC-STEM based EELS/EDS and newly developed APT, have been pushing the resolution and sensitivity to a new level. On the other hand, the structural analysis techniques, like XRD and SEM based EBSD, has been providing materials structural information with great precision. But, most recently, the emerging TEM based Precession Electron Diffraction (PED) technique has started bringing this analysis to the nanometer scale, which has been essential to meet the demand of the nano-scale structural analysis at the nowadays aggressively size-shrinking technologies and processes.
In this webinar, we will discuss this PED technique, including the fundamental principles, instrumentation, strengths and limitations, and more importantly, the real-world application, which includes crystal grain orientation mapping and strain mapping in various devices, e.g. 7nm EUV technology IC chip, 96 layers 3D NAND device, strained Si, etc.
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About the Presenter:
Jeff (Shaojie) Wang, Ph.D., Senior Materials Scientist
Dr. Jeff (Shaojie) Wang is a Senior Materials Scientist at Nanolab Technologies, Eurofins Materials Science. He received a B.S. in Physics from the University of Science and Technology of China (USTC) in 2003, and a Ph.D. in Materials Sciences and Engineering from Lehigh University in 2012.
In this webinar we will cover:
- Brief introduction of TEM basics and application
- Precession Electron Diffraction (PED), including working principle, instrumentation, strength and limitation
- Application of these techniques, including crystal grain orientation mapping and strain mapping in various devices, e.g. 7nm EUV technology IC chip, 96 layers 3D NAND device, strained Si, etc.